Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

摘要

Abstract available in English only.

We reveal a universal origin of the layer Hall effect in terms of hidden Berry curvature and establish material-design principles for enhancing it. Although the total Berry curvature vanishes in momentum space, a layer-locked hidden Berry curvature produces opposite Hall responses in different layers and is substantially enhanced in antiferromagnetic topological insulators.