Magnetic topological transistor exploiting layer-selective transport

摘要

Abstract available in English only.

We propose a magnetic topological transistor based on MnBi2Te4, in which quantized-conductance on and zero-conductance off states are switched by changing the relative direction of two adjacent in-plane electric fields. The mechanism relies on the interplay of topology, magnetism, and layer degrees of freedom. The on and off states remain robust against disorder because they are carried by topological surface states.